Vishay SQ4920EY-T1_GE3 Dual N-channel MOSFET, 8 A, 30 V, 8-Pin SOIC

Vishay

Product Information

Forward Voltage Vf:
0.75V
Width:
4 mm
Maximum Drain Source Resistance Rds:
17.5mΩ
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
19.7nC
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
8A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
4.4W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
TrenchFET
Height:
1.5mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is Dual N-channel MOSFET 8 A 30 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SQ4920EY-T1_GE3. Furthermore, the product is 4 mm wide. The product complies with automotive standard - aec-q101. The product offers isolated transistor configuration. The package is a sort of soic. It consists of 2 elements per chip. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55°c.

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SQ4920EY, Automotive Dual N-Channel 30V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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