Maximum Continuous Drain Current:
9.5 A, 14.5 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
PowerPAIR
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.4 nC @ 10 V, 8 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W, 33 W
Series:
PowerPAIR
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
17 mΩ, 30 mΩ
This is Dual N-channel MOSFET 9.5 A 14.5 A 30 V PowerPAIR 8-Pin PowerPAIR manufactured by Vishay. The manufacturer part number is SIZ904DT-T1-GE3. While 9.5 a, 14.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers series transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of powerpair. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.4 nc @ 10 v, 8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 20 w, 33 w maximum power dissipation. The product powerpair, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 17 mω, 30 mω maximum drain source resistance.
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