Vishay SIR632DP-T1-RE3 N-channel MOSFET, 29 A, 150 V, 8-Pin SO
Product Information
Maximum Continuous Drain Current:
29 A
Width:
5.26mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Length:
6.25mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
69.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
41 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SIR632DP-T1-RE3 Internationally to many countries around the world.
This is N-channel MOSFET 29 A 150 V 8-Pin SO manufactured by Vishay. The manufacturer part number is SIR632DP-T1-RE3. While 29 a of maximum continuous drain current. Furthermore, the product is 5.26mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of powerpak so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 69.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 41 mω maximum drain source resistance.
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