Vishay SIB406EDK-T1-GE3 N-channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
7.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
10 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Width:
1.7mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
63 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SIB406EDK-T1-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 5.1 A 20 V 6-Pin SC-75 manufactured by Vishay. The manufacturer part number is SIB406EDK-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 7.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 10 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.8mm. Furthermore, the product is 1.7mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 0.6v. The package is a sort of sc-75. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 63 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.
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