Vishay SI2325DS-T1-E3 P-channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23

SI2325DS-T1-E3 Vishay  P-channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23
SI2325DS-T1-E3
Vishay

Product Information

Maximum Drain Source Voltage:
150 V
Typical Gate Charge @ Vgs:
7.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
750 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Minimum Gate Threshold Voltage:
2.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
530 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.2 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 530 mA 150 V 3-Pin SOT-23 manufactured by Vishay. The manufacturer part number is SI2325DS-T1-E3. It has a maximum of 150 v drain source voltage. With a typical gate charge at Vgs includes 7.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 750 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. Whereas its minimum gate threshold voltage includes 2.5v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 530 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Trans MOSFET P-CH 150V 0.53A(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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