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This is Si1308EDL-T1-GE3 N-channel MOSFET 1.5 A 30 V 3-Pin SOT-323 manufactured by Vishay. The manufacturer part number is SI1308EDL-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 1.4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.6v. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 185 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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