ON Semiconductor NTMFS5H414NLT1G
Product Information
Maximum Continuous Drain Current:
210 A
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2 mΩ
Base Part Number:
NTMFS5
Detailed Description:
N-Channel 40V 35A (Ta), 210A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
4550pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 20A, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3.1W (Ta), 110W (Tc)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 210A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS5H414NLT1G. While 210 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 75 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2 mω maximum drain source resistance. Base Part Number: ntmfs5. It features n-channel 40v 35a (ta), 210a (tc) 3.1w (ta), 110w (tc) surface mount. The product's input capacitance at maximum includes 4550pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 75nc @ 10v. It has a maximum Rds On and voltage of 1.4mohm @ 20a, 10v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3.1w (ta), 110w (tc). The continuous current drain at 25°C is 35a (ta), 210a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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