ON Semiconductor IRFM120ATF
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.4 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 100V 2.3A (Ta) 2.4W (Ta) Surface Mount SOT-223-4
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
IRFM120
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-4
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Customer Reference:
Power Dissipation (Max):
2.4W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship IRFM120ATF Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is IRFM120ATF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.4 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 200 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 100v 2.3a (ta) 2.4w (ta) surface mount sot-223-4. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: irfm120. The maximum gate charge and given voltages include 22nc @ 10v. It has a maximum Rds On and voltage of 200mohm @ 1.15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 480pf @ 25v. sot-223-4 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.3a (ta). The product carries maximum power dissipation 2.4w (ta). This product use mosfet (metal oxide) technology.
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