ON Semiconductor HUF75345G3
Product Information
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 20 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
325 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-247-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
HUF75345
Gate Charge (Qg) (Max) @ Vgs:
275nC @ 20V
Rds On (Max) @ Id, Vgs:
7mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
55V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4000pF @ 25V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Customer Reference:
Power Dissipation (Max):
325W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship HUF75345G3 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HUF75345G3. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.82mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 220 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 325 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7 mω maximum drain source resistance. It has typical 50 weeks of manufacturer standard lead time. It features n-channel 55v 75a (tc) 325w (tc) through hole to-247-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: huf75345. The maximum gate charge and given voltages include 275nc @ 20v. It has a maximum Rds On and voltage of 7mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4000pf @ 25v. The product ultrafet™, is a highly preferred choice for users. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 325w (tc). This product use mosfet (metal oxide) technology.
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