ON Semiconductor FDV301N
Product Information
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.06V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.49 nC @ 4.5 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9 Ω
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23
Vgs(th) (Max) @ Id:
1.06V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
FDV301
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Customer Reference:
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDV301N. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDV301N.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520026 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520026.
Yes. We ship FDV301N Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDV301N. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.06v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.49 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.93mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 9 ω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 25v 220ma (ta) 350mw (ta) surface mount sot-23. The typical Vgs (th) (max) of the product is 1.06v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: fdv301. The maximum gate charge and given voltages include 0.7nc @ 4.5v. It has a maximum Rds On and voltage of 4ohm @ 400ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 9.5pf @ 10v. sot-23 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 220ma (ta). The product carries maximum power dissipation 350mw (ta). This product use mosfet (metal oxide) technology.
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