ON Semiconductor FDS6898A
Product Information
Maximum Continuous Drain Current:
9.4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS6898
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1821pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
14mOhm @ 9.4A, 4.5V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
42 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
9.4A
Manufacturer:
ON Semiconductor
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Yes. We ship FDS6898A Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDS6898A. While 9.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 14 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fds6898. It features mosfet array 2 n-channel (dual) 20v 9.4a 900mw surface mount 8-soic. The product's input capacitance at maximum includes 1821pf @ 10v. The maximum gate charge and given voltages include 23nc @ 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 14mohm @ 9.4a, 4.5v. 8-soic is the supplier device package value. It has typical 42 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 900mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 9.4a. The on semiconductor's product offers user-desired applications.
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