ON Semiconductor FDS4501H
Product Information
Maximum Continuous Drain Current:
5.6 A, 9.3 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V, 30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V, 17 nC @ 4.5 V
Channel Type:
N, P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
29 mΩ, 80 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS45
Detailed Description:
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1958pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 9.3A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V, 20V
Current - Continuous Drain (Id) @ 25°C:
9.3A, 5.6A
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519783 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519783.
Yes. We ship FDS4501H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDS4501H. While 5.6 a, 9.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers common drain transistor configuration. It has a maximum of 20 v, 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 4.5 v, 17 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.575mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 29 mω, 80 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fds45. It features mosfet array n and p-channel 30v, 20v 9.3a, 5.6a 1w surface mount 8-soic. The product's input capacitance at maximum includes 1958pf @ 10v. The maximum gate charge and given voltages include 27nc @ 4.5v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 18mohm @ 9.3a, 10v. 8-soic is the supplier device package value. It has typical 39 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1w. The product has a 30v, 20v drain to source voltage. The continuous current drain at 25°C is 9.3a, 5.6a. The on semiconductor's product offers user-desired applications.
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