Maximum Continuous Drain Current:
5.6 A, 9.3 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V, 30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V, 17 nC @ 4.5 V
Channel Type:
N, P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
29 mΩ, 80 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDS45
Detailed Description:
Mosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
1958pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 9.3A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
30V, 20V
Current - Continuous Drain (Id) @ 25°C:
9.3A, 5.6A
Manufacturer:
ON Semiconductor
