ON Semiconductor FDP65N06
Product Information
Maximum Continuous Drain Current:
65 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
135 W
Series:
UniFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 60V 65A (Tc) 135W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP65
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 32.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2170pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
65A (Tc)
Customer Reference:
Power Dissipation (Max):
135W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search FDP65N06 on website for other similar products.
We accept all major payment methods for all products including ET14519605. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FDP65N06 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDP65N06. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDP65N06.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519605 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519605.
Yes. We ship FDP65N06 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDP65N06. While 65 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 135 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 16 mω maximum drain source resistance. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 60v 65a (tc) 135w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fdp65. The maximum gate charge and given voltages include 43nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 32.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2170pf @ 25v. The product unifet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 65a (tc). The product carries maximum power dissipation 135w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.