Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.8 nC @ 4.5 V
Channel Type:
P
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.94mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
125 mΩ
Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
FDN308
Gate Charge (Qg) (Max) @ Vgs:
5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
125mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
341pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT-3
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDN308P. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.94mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 125 mω maximum drain source resistance. It has typical 10 weeks of manufacturer standard lead time. It features p-channel 20v 1.5a (ta) 500mw (ta) surface mount supersot-3. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: fdn308. The maximum gate charge and given voltages include 5.4nc @ 4.5v. It has a maximum Rds On and voltage of 125mohm @ 1.5a, 4.5v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 341pf @ 10v. The product powertrench®, is a highly preferred choice for users. supersot-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.5a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.
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