Maximum Drain Source Voltage:
120 V
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Width:
5.85mm
Length:
5mm
Maximum Drain Source Resistance:
21.5 mΩ
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
49 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 120V 11.6A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86
Gate Charge (Qg) (Max) @ Vgs:
46nC @ 10V
Rds On (Max) @ Id, Vgs:
11.5mOhm @ 11.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
120V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2735pF @ 60V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.6A (Ta), 49A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS86201. It has a maximum of 120 v drain source voltage. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Furthermore, the product is 5.85mm wide. Its accurate length is 5mm. It provides up to 21.5 mω maximum drain source resistance. The package is a sort of power 56. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 49 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 120v 11.6a (ta), 49a (tc) 2.5w (ta), 104w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms86. The maximum gate charge and given voltages include 46nc @ 10v. It has a maximum Rds On and voltage of 11.5mohm @ 11.6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 120v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2735pf @ 60v. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11.6a (ta), 49a (tc). The product carries maximum power dissipation 2.5w (ta), 104w (tc). This product use mosfet (metal oxide) technology.
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