Maximum Continuous Drain Current:
211 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
102 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
74 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±16 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
1.09 mΩ
FET Feature:
Schottky Diode (Body)
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 30V 211A (Tc) 74W (Tc) Surface Mount 8-PQFN (5x6)
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS1D4
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1.09mOhm @ 38A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
10250pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
211A (Tc)
Customer Reference:
Power Dissipation (Max):
74W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS1D4N03S. While 211 a of maximum continuous drain current. Furthermore, the product is 5.85mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 102 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 74 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±16 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 1.09 mω maximum drain source resistance. The FET features of the product include schottky diode (body). It has typical 14 weeks of manufacturer standard lead time. It features n-channel 30v 211a (tc) 74w (tc) surface mount 8-pqfn (5x6). The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms1d4. The maximum gate charge and given voltages include 65nc @ 4.5v. It has a maximum Rds On and voltage of 1.09mohm @ 38a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±16v. The product's input capacitance at maximum includes 10250pf @ 15v. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 211a (tc). The product carries maximum power dissipation 74w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.