Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Full Bridge
Maximum Drain Source Voltage:
100 V
Package Type:
MLP
Number of Elements per Chip:
4
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
12
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
17 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
191 mΩ
FET Feature:
Standard
Base Part Number:
FDMQ84
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W Surface Mount 12-MLP (5x4.5)
Input Capacitance (Ciss) (Max) @ Vds:
215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
GreenBridge™ PowerTrench®
Package / Case:
12-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
110mOhm @ 3A, 10V
Supplier Device Package:
12-MLP (5x4.5)
Manufacturer Standard Lead Time:
41 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Customer Reference:
Power - Max:
1.9W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
3.1A
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FDMQ8403. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers full bridge transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of mlp. It consists of 4 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 12 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 17 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 191 mω maximum drain source resistance. The FET features of the product include standard. Base Part Number: fdmq84. It features mosfet array 4 n-channel (h-bridge) 100v 3.1a 1.9w surface mount 12-mlp (5x4.5). The product's input capacitance at maximum includes 215pf @ 15v. The maximum gate charge and given voltages include 5nc @ 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product greenbridge™ powertrench®, is a highly preferred choice for users. Moreover, the product comes in 12-wdfn exposed pad. It has a maximum Rds On and voltage of 110mohm @ 3a, 10v. 12-mlp (5x4.5) is the supplier device package value. It has typical 41 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 1.9w. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 3.1a. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.