Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Full Bridge
Maximum Drain Source Voltage:
100 V
Package Type:
MLP
Number of Elements per Chip:
4
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
12
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
17 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
191 mΩ
FET Feature:
Standard
Base Part Number:
FDMQ84
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W Surface Mount 12-MLP (5x4.5)
Input Capacitance (Ciss) (Max) @ Vds:
215pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
GreenBridge™ PowerTrench®
Package / Case:
12-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
110mOhm @ 3A, 10V
Supplier Device Package:
12-MLP (5x4.5)
Manufacturer Standard Lead Time:
41 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Customer Reference:
Power - Max:
1.9W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
3.1A
Manufacturer:
ON Semiconductor
