ON Semiconductor FDMC8200S
Product Information
Maximum Continuous Drain Current:
23 A, 46 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.7 nC @ 10 V, 7.3 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.9 W, 2.5 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.5 mΩ, 32 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMC82
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
20mOhm @ 6A, 10V
Supplier Device Package:
8-Power33 (3x3)
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
700mW, 1W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6A, 8.5A
Manufacturer:
ON Semiconductor
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519125 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519125.
Yes. We ship FDMC8200S Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDMC8200S. While 23 a, 46 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. The product offers series transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of power 33. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.7 nc @ 10 v, 7.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.9 w, 2.5 w maximum power dissipation. The product powertrench, syncfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 13.5 mω, 32 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdmc82. It features mosfet array 2 n-channel (dual) 30v 6a, 8.5a 700mw, 1w surface mount 8-power33 (3x3). The product's input capacitance at maximum includes 660pf @ 15v. The maximum gate charge and given voltages include 10nc @ 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 20mohm @ 6a, 10v. 8-power33 (3x3) is the supplier device package value. It has typical 39 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 700mw, 1w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 6a, 8.5a. The on semiconductor's product offers user-desired applications.
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