ON Semiconductor FDG313N
Product Information
Maximum Continuous Drain Current:
950 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
750 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
760 mΩ
Base Part Number:
FDG313
Detailed Description:
N-Channel 25V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Power Dissipation (Max):
750mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
950mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship FDG313N Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDG313N. While 950 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of sot-363 (sc-70). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.64 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 750 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 760 mω maximum drain source resistance. Base Part Number: fdg313. It features n-channel 25v 950ma (ta) 750mw (ta) surface mount sc-88 (sc-70-6). The product's input capacitance at maximum includes 50pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 25v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 2.3nc @ 4.5v. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. sc-88 (sc-70-6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 6-tssop, sc-88, sot-363. The product carries maximum power dissipation 750mw (ta). The continuous current drain at 25°C is 950ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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