ON Semiconductor FDD5N60NZTM
Product Information
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 Ω
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD5N60
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 25V
Mounting Type:
Surface Mount
Series:
UniFET-II™
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Customer Reference:
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDD5N60NZTM Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDD5N60NZTM. While 2.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 83 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2 ω maximum drain source resistance. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 600v 4a (tc) 83w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd5n60. The maximum gate charge and given voltages include 13nc @ 10v. It has a maximum Rds On and voltage of 2ohm @ 2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 600pf @ 25v. The product unifet-ii™, is a highly preferred choice for users. d-pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). The product carries maximum power dissipation 83w (tc). This product use mosfet (metal oxide) technology.
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