Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
80 mΩ
Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB350
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
47mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
815pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 14A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDB3502. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 41 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 80 mω maximum drain source resistance. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 75v 6a (ta), 14a (tc) 3.1w (ta), 41w (tc) surface mount to-263ab. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb350. The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 47mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 75v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 815pf @ 40v. The product powertrench®, is a highly preferred choice for users. to-263ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6a (ta), 14a (tc). The product carries maximum power dissipation 3.1w (ta), 41w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.