ON Semiconductor FCPF190N65S3L1
Product Information
Maximum Continuous Drain Current:
14 A
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
33 W
Maximum Gate Source Voltage:
±30 V
Height:
15.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
190 mΩ
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 14A (Tc) 33W (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
4.5V @ 1.4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF190
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 7A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1225pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220F-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Customer Reference:
Power Dissipation (Max):
33W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FCPF190N65S3L1 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FCPF190N65S3L1. While 14 a of maximum continuous drain current. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 33 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 190 mω maximum drain source resistance. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 14a (tc) 33w (tc) through hole to-220f-3. The typical Vgs (th) (max) of the product is 4.5v @ 1.4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fcpf190. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 190mohm @ 7a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1225pf @ 400v. The product superfet® iii, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 14a (tc). The product carries maximum power dissipation 33w (tc). This product use mosfet (metal oxide) technology.
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