ON Semiconductor FCP600N60Z
Product Information
Category:
High Voltage
Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
7.4 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
PRICED TO CLEAR:
Yes
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
840 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
89 W
Series:
SuperFET II
Maximum Gate Source Voltage:
+30 V
Height:
16.51mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
600 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Rds On (Max) @ Id, Vgs:
600 mOhm @ 3.7A, 10V
FET Type:
N-Channel
Standard Package:
800
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1120pF @ 25V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7.4A (Tc)
Power Dissipation (Max):
89W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search FCP600N60Z on website for other similar products.
We accept all major payment methods for all products including ET14518323. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FCP600N60Z directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FCP600N60Z. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FCP600N60Z.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14518323 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14518323.
Yes. We ship FCP600N60Z Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FCP600N60Z. It is of high voltage category . The given dimensions of the product include 10.67 x 4.83 x 16.51mm. While 7.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. It has a priced to clear feature yes . With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 840 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 39 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 89 w maximum power dissipation. The product superfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of +30 v. In addition, the height is 16.51mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 600 mω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 600v 7.4a (tc) 89w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 26nc @ 10v. It has a maximum Rds On and voltage of 600 mohm @ 3.7a, 10v. It carries FET type n-channel. It is available in the standard package of 800. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1120pf @ 25v. The product superfet® ii, is a highly preferred choice for users. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7.4a (tc). The product carries maximum power dissipation 89w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.