Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
216 W
Series:
SupreMOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
126 mΩ
Rds On (Max) @ Id, Vgs:
126 mOhm @ 12.5A, 10V
Detailed Description:
N-Channel 600V 25A (Tc) 216W (Tc) Through Hole TO-247
Input Capacitance (Ciss) (Max) @ Vds:
3352pF @ 100V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
SupreMOS™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
74nC @ 10V
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-247-3
Power Dissipation (Max):
216W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
