ON Semiconductor FCH023N65S3L4
Product Information
Maximum Continuous Drain Current:
75 A
Width:
5.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247 A04
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
222 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
595 W
Maximum Gate Source Voltage:
±30 V
Height:
22.74mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
23 mΩ
Rds On (Max) @ Id, Vgs:
23 mOhm @ 37.5A, 10V
Detailed Description:
N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds:
7160pF @ 400V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 7.5mA
Series:
SuperFET® III
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
222nC @ 10V
Supplier Device Package:
TO-247-4L
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-247-4
Power Dissipation (Max):
595W (Tc)
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship FCH023N65S3L4 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FCH023N65S3L4. While 75 a of maximum continuous drain current. Furthermore, the product is 5.2mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247 a04. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 222 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 595 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 22.74mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 23 mω maximum drain source resistance. It has a maximum Rds On and voltage of 23 mohm @ 37.5a, 10v. It features n-channel 650v 75a (tc) 595w (tc) through hole to-247-4l. The product's input capacitance at maximum includes 7160pf @ 400v. The typical Vgs (th) (max) of the product is 4.5v @ 7.5ma. The product superfet® iii, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 222nc @ 10v. to-247-4l is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-4. The product carries maximum power dissipation 595w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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