Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.8 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
92.6 W
Series:
SupreMOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
390 mΩ
Detailed Description:
N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD9
Gate Charge (Qg) (Max) @ Vgs:
17.8nC @ 10V
Rds On (Max) @ Id, Vgs:
385mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 100V
Mounting Type:
Surface Mount
Series:
SupreMOS™
Supplier Device Package:
D-Pak
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Customer Reference:
Power Dissipation (Max):
92.6W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FCD9N60NTM. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 92.6 w maximum power dissipation. The product supremos, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 390 mω maximum drain source resistance. It features n-channel 600v 9a (tc) 92.6w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fcd9. The maximum gate charge and given voltages include 17.8nc @ 10v. It has a maximum Rds On and voltage of 385mohm @ 4.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1000pf @ 100v. The product supremos™, is a highly preferred choice for users. d-pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). The product carries maximum power dissipation 92.6w (tc). This product use mosfet (metal oxide) technology.
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