ON Semiconductor BSS123W
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
170 mA
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.3V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Base Part Number:
BSS123
Detailed Description:
N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SC-70 (SOT323)
Input Capacitance (Ciss) (Max) @ Vds:
71pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
Supplier Device Package:
SC-70 (SOT323)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-70, SOT-323
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BSS123W. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BSS123W.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14514227 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14514227.
Yes. We ship BSS123W Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BSS123W. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 10 ω maximum drain source resistance. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 170 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.8v. Its forward diode voltage is 1.3v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 38 weeks of manufacturer standard lead time. Base Part Number: bss123. It features n-channel 100v 170ma (ta) 200mw (ta) surface mount sc-70 (sot323). The product's input capacitance at maximum includes 71pf @ 25v. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 6ohm @ 170ma, 10v. sc-70 (sot323) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-70, sot-323. The product carries maximum power dissipation 200mw (ta). The continuous current drain at 25°C is 170ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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