Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
170 mA
Minimum Gate Threshold Voltage:
0.8V
Forward Diode Voltage:
1.3V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Base Part Number:
BSS123
Detailed Description:
N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SC-70 (SOT323)
Input Capacitance (Ciss) (Max) @ Vds:
71pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
Supplier Device Package:
SC-70 (SOT323)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-70, SOT-323
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
