Diodes Inc DMN3016LK3-13 N-channel MOSFET, 38 A, 30 V, 3-Pin DPAK
Product Information
Maximum Continuous Drain Current:
38 A
Transistor Material:
Si
Width:
6.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25.1 nC @ 10 V
Channel Type:
N
Length:
6.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
16 mΩ
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Yes. We ship DMN3016LK3-13 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 38 A 30 V 3-Pin DPAK manufactured by DiodesZetex. The manufacturer part number is DMN3016LK3-13. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 16 mω maximum drain source resistance.
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