This is Diodes Inc Dual N-channel MOSFET 10 A 20 V 6-Pin WDFN manufactured by DiodesZetex. The manufacturer part number is DMN2013UFX-7. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of wdfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 57.4 nc @ 8 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.14 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 14 mω maximum drain source resistance.
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This is Diodes Inc Dual N-channel MOSFET 10 A 20 V 6-Pin WDFN manufactured by DiodesZetex. The manufacturer part number is DMN2013UFX-7. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of wdfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 57.4 nc @ 8 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.14 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 14 mω maximum drain source resistance.
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