Toshiba TPC8117(TE12L,Q) P-channel MOSFET, 18 A, 30 V, 8-Pin
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
130 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
P
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
4 mΩ
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Height:
1.5mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. We ship TPC8117(TE12L,Q) Internationally to many countries around the world.
This is P-channel MOSFET 18 A 30 V 8-Pin manufactured by Toshiba. The manufacturer part number is TPC8117(TE12L,Q). It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 130 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 4 mω maximum drain source resistance. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 1.5mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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