Toshiba TPC8027(TE12L,Q) N-channel MOSFET, 18 A, 30 V, 8-Pin

TPC8027-TE12L-Q- Toshiba TPC8027(TE12L,Q) N-channel MOSFET, 18 A, 30 V, 8-Pin
Toshiba

Product Information

Category:
Power MOSFET
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
113 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4200 pF@ 10 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
3 mΩ
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Height:
1.5mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 18 A 30 V 8-Pin manufactured by Toshiba. The manufacturer part number is TPC8027(TE12L,Q). It is of power mosfet category . It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 113 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4200 pf@ 10 v . The product carries 2.5v of maximum gate threshold voltage. It provides up to 3 mω maximum drain source resistance. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 1.5mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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TPC8027 N-channel MOSFET 18A 30V(Technical Reference)

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