Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
DP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 5 V, 38 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
60 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 mΩ
This is N-channel MOSFET 50 A 40 V TK 3-Pin DP manufactured by Toshiba. The manufacturer part number is TK50P04M1(T6RSS-Q). While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of dp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 20 nc @ 5 v, 38 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 60 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.8 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.