Toshiba SSM6P36TU(TE85L,F) Dual P-channel MOSFET, 330 mA, 20 V SSM6, 6-Pin UF
Product Information
Maximum Continuous Drain Current:
330 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
UF6
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.2 nC @ 4 V
Channel Type:
P
Length:
1.25mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
SSM6
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Dual P-channel MOSFET 330 mA 20 V SSM6 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6P36TU(TE85L,F). While 330 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of uf6. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.2 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 1.25mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.6 ω maximum drain source resistance.
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