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This is Dual N-channel MOSFET 500 mA 20 V SSM6 6-Pin ES manufactured by Toshiba. The manufacturer part number is SSM6N36FE(TE85L,F). While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.2mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of es. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.23 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 1.2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.55mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.52 ω maximum drain source resistance.
For more information please check the datasheets.
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