Toshiba SSM6K407TU(TE85L,F N-channel MOSFET, 2 A, 60 V SSM6, 6-Pin UF
Product Information
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
UF6
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
N
Length:
1.7mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
SSM6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
440 mΩ
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This is N-channel MOSFET 2 A 60 V SSM6 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6K407TU(TE85L,F. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of uf6. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 440 mω maximum drain source resistance.
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