Toshiba SSM3K35MFV(TPL3) N-channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM
Product Information
Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Series:
SSM3
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1V
Height:
0.5mm
Width:
0.8mm
Length:
1.2mm
Maximum Drain Source Resistance:
3 Ω
Package Type:
VESM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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You can order Toshiba brand products with SSM3K35MFV(TPL3) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba SSM3K35MFV(TPL3) N-channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM. You can also check on our website or by contacting our customer support team for further order details on Toshiba SSM3K35MFV(TPL3) N-channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14149965 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14149965.
Yes. We ship SSM3K35MFV(TPL3) Internationally to many countries around the world.
This is N-channel MOSFET 180 mA 20 V SSM3 3-Pin VESM manufactured by Toshiba. The manufacturer part number is SSM3K35MFV(TPL3). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.5mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.2mm. It provides up to 3 ω maximum drain source resistance. The package is a sort of vesm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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