Toshiba SSM3J36FS(TE85L,F) P-channel MOSFET, 330 mA, 20 V SSM3, 3-Pin SSM
Product Information
Maximum Continuous Drain Current:
330 mA
Transistor Material:
Si
Width:
0.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SSM
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.2 nC @ 4 V
Channel Type:
P
Length:
1.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Series:
SSM3
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is P-channel MOSFET 330 mA 20 V SSM3 3-Pin SSM manufactured by Toshiba. The manufacturer part number is SSM3J36FS(TE85L,F). While 330 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.8mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of ssm. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.2 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 1.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.6 ω maximum drain source resistance.
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