Toshiba SSM3J130TU(TE85L) P-channel MOSFET, 4.4 A, 20 V SSM3, 3-Pin UFM
Product Information
Maximum Continuous Drain Current:
4.4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
UFM
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24.8 nC @ 4.5 V
Channel Type:
P
Length:
2.1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Series:
SSM3
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
63 mΩ
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This is P-channel MOSFET 4.4 A 20 V SSM3 3-Pin UFM manufactured by Toshiba. The manufacturer part number is SSM3J130TU(TE85L). While 4.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of ufm. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 800 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 63 mω maximum drain source resistance.
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