Toshiba 2SK1062(F) N-channel MOSFET, 200 mA, 60 V 2SK, 3-Pin SC-59
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Series:
2SK
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-346
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship 2SK1062(F) Internationally to many countries around the world.
This is N-channel MOSFET 200 mA 60 V 2SK 3-Pin SC-59 manufactured by Toshiba. The manufacturer part number is 2SK1062(F). It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. The product 2sk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 1.5mm wide. Its accurate length is 2.9mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of sot-346. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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