Vishay SUD50N04-8M8P-4GE3 N-channel MOSFET, 50 A, 40 V, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Maximum Drain Source Resistance:
10.5 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 50 A 40 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SUD50N04-8M8P-4GE3. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 10.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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