Diodes Inc DMP4051LK3-13 P-channel MOSFET, 10.5 A, 40 V, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
8.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
2.39mm
Width:
6.2mm
Length:
6.7mm
Maximum Drain Source Resistance:
85 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search DMP4051LK3-13 on website for other similar products.
We accept all major payment methods for all products including ET14108454. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with DMP4051LK3-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMP4051LK3-13 P-channel MOSFET, 10.5 A, 40 V, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMP4051LK3-13 P-channel MOSFET, 10.5 A, 40 V, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14108454 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14108454.
Yes. We ship DMP4051LK3-13 Internationally to many countries around the world.
This is Diodes Inc P-channel MOSFET 10.5 A 40 V 3-Pin DPAK manufactured by DiodesZetex. The manufacturer part number is DMP4051LK3-13. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 8.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 2.39mm. Furthermore, the product is 6.2mm wide. Its accurate length is 6.7mm. It provides up to 85 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.