Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.6mm
Width:
1.25mm
Length:
1.7mm
Maximum Drain Source Resistance:
1.7 Ω, 6 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA, 620 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
This is Diodes Inc Dual N/P-channel MOSFET 280 mA 620 mA 60 V 6-Pin SOT-563 manufactured by DiodesZetex. The manufacturer part number is DMG1029SV-7. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.28 nc @ 4.5 v, 0.3 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.25mm wide. Its accurate length is 1.7mm. It provides up to 1.7 ω, 6 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 280 ma, 620 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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