Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
1.5 Ω, 750 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A, 840 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
This is Diodes Inc Dual N/P-channel MOSFET 1 A 840 mA 20 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is DMG1016UDW-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.62 nc @ 4.5 v, 0.74 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 330 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 1.5 ω, 750 mω maximum drain source resistance. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a, 840 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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