Infineon IRFS4227PBF N-channel MOSFET, 62 A, 200 V HEXFET, 3-Pin D2PAK

IRFS4227PBF Infineon  N-channel MOSFET, 62 A, 200 V HEXFET, 3-Pin D2PAK
IRFS4227PBF
Infineon

Product Information

Maximum Continuous Drain Current:
62 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
26 mΩ
RoHs Compliant
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This is N-channel MOSFET 62 A 200 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS4227PBF. While 62 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 330 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 26 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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