Infineon IRFH7085TRPBF N-channel MOSFET, 147 A, 60 V HEXFET, 8-Pin PQFN
Product Information
Maximum Continuous Drain Current:
147 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Length:
6.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
156 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.2 mΩ
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Yes. We ship IRFH7085TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 147 A 60 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH7085TRPBF. While 147 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.15mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 156 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.2 mω maximum drain source resistance.
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