Infineon IPW65R190CFDAFKSA1 N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247

IPW65R190CFDAFKSA1 Infineon  N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247
IPW65R190CFDAFKSA1
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
16.03 x 5.16 x 21.1mm
Maximum Continuous Drain Current:
17.5 A
Transistor Material:
Si
Width:
5.16mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
68 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1850 pF @ 100 V
Length:
16.03mm
Pin Count:
3
Typical Turn-Off Delay Time:
53.2 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
151 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 17.5 A 650 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R190CFDAFKSA1. It is of power mosfet category . The given dimensions of the product include 16.03 x 5.16 x 21.1mm. While 17.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.16mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 68 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1850 pf @ 100 v . Its accurate length is 16.03mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 53.2 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 151 w maximum power dissipation. The product coolmos cfd, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 190 mω maximum drain source resistance.

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650V CoolMOS™ CFDA Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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