Infineon IPB80P04P407ATMA1 P-channel MOSFET, 80 A, 40 V OptiMOS P, 3-Pin D2PAK

Infineon

Product Information

Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
88W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
40V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
68nC
Series:
OptiMOS P
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1V
Height:
4.4mm
Width:
9.25 mm
Length:
10mm
Package Type:
TO-263
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
7.7mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
80A
Channel Type:
Type P
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
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This is P-channel MOSFET 80 A 40 V OptiMOS P 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB80P04P407ATMA1. The product complies with automotive standard - aec-q101. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product optimos p, is a highly preferred choice for users. In addition, the height is 4.4mm. Furthermore, the product is 9.25 mm wide. Its accurate length is 10mm. The package is a sort of to-263. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a surface type mount .

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IPB80P04P4-07, IPI80P04P4-07, IPP80P04P4-07 OptiMOS-P2 Power Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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