This is N-channel MOSFET 30 A 30 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISA10DN-T1-GE3. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 39 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.
SiSA10DN, N-Channel 30V (Drain-Source) MOSFET Data Sheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 30 A 30 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISA10DN-T1-GE3. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 39 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.