Vishay SISA10DN-T1-GE3 N-channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAK 1212

Vishay

Product Information

Forward Voltage Vf:
0.8V
Width:
3.4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
34nC
Package Type:
PowerPAK 1212
Maximum Continuous Drain Current Id:
30A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
5mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
3.4mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
39W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
TrenchFET
Height:
1.12mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is N-channel MOSFET 30 A 30 V TrenchFET 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SISA10DN-T1-GE3. Furthermore, the product is 3.4 mm wide. The product complies with automotive standard - no. The package is a sort of powerpak 1212. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55°c.

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SiSA10DN, N-Channel 30V (Drain-Source) MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SISA10DN-T1-GE3 N-channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAK 1212. You can also check on our website or by contacting our customer support team for further order details on Vishay SISA10DN-T1-GE3 N-channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAK 1212.