Vishay SI4532CDY-T1-GE3 Dual N/P-channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V, 7.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.78 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.3 A, 6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
65 mΩ, 140 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
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You can order Vishay brand products with SI4532CDY-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SI4532CDY-T1-GE3 Dual N/P-channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Vishay SI4532CDY-T1-GE3 Dual N/P-channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14080533 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14080533.
Yes. We ship SI4532CDY-T1-GE3 Internationally to many countries around the world.
This is Dual N/P-channel MOSFET 4.3 A 6 A 30 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4532CDY-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 6 nc @ 10 v, 7.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.78 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.3 a, 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 65 mω, 140 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.
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