Wolfspeed C2M1000170J N-channel SiC MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
5.3 A
Transistor Material:
SiC
Width:
10.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1700 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 20 V
Channel Type:
N
Length:
10.23mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.8V
Maximum Drain Source Resistance:
1.4 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Wolfspeed C2M1000170J N-channel SiC MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C2M1000170J N-channel SiC MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK.
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Yes. We ship C2M1000170J Internationally to many countries around the world.
This is N-channel SiC MOSFET 5.3 A 1700 V 7-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C2M1000170J. While 5.3 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 10.99mm wide. The product offers single transistor configuration. It has a maximum of 1700 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 78 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +25 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 3.8v . It provides up to 1.4 ω maximum drain source resistance.
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